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MMDF1N05E, MVDF1N05E
1200
1000
V GS
C iss
C rss
0
V DS
T J = 25 ° C
12
10
V DS = 25 V
I D = 1.2 A
800
600
V DS = 0
V GS = 0
8
6
400
200
C iss
C oss
C rss
4
2
0
20
15
10
5
0
5 10 15
20
25
0
0
2
4
6
8
10
12
14
16
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate Charge versus
Gate ? To ? Source Voltage
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area
The FBSOA curves define the maximum drain ? to ? source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
100
10
1
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
Mounted on 2 ″ sq. FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″
thick single sided) with one die operating, 10s max.
10 m s
100 m s
10 ms
dc
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25 ° C
and a maximum junction temperature of 150 ° C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves. ON
Semiconductor Application Note, AN569, “Transient
Thermal Resistance ? General Data and Its Use” provides
detailed instructions.
0.1
0.01
0.1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Forward Biased
100
Safe Operating Area
10
1
D = 0.5
0.2
0.1
0.1
0.05
Normalized to q ja at 10s.
0.02
Chip
0.0175 W
0.0710 W
0.2706 W
0.5776 W
0.7086 W
0.01
0.01
SINGLE PULSE
0.0154 F
0.0854 F
0.3074 F
1.7891 F
107.55 F
Ambient
0.001
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t, TIME (s)
Figure 10. Thermal Response
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